Title：Fundamentals of Emerging Memory Circuit Design for Embedded and AI Applications
Location: Meeting Room 2, 3rd Floor, Crowne Plaza Kunming City Centre
Time: 13:30-15:00, Oct. 21, 2025, Tuesday
Speaker: Prof. Jianguo Yang, Zhangjiang Laboratory, China

Abstract: This tutorial provides a comprehensive methodology for emerging memory circuit design targeting embedded systems and AI accelerators, with focus on RRAM, MRAM, PCRAM, and FeRAM. The talk will first establish fundamental circuit design principles for each memory type, covering bit cell, read/write circuitry, and reliability enhancement techniques. Special emphasis will be placed on device-circuit co-design strategies for energy-constrained embedded scenarios and compute-in-memory implementations for AI workloads. The tutorial will then move on to explore advanced design cases for SoC and AI applications.

Bio: 

Prof. Jianguo Yang‌ is a Professor at Zhangjiang Laboratory and Fudan University. He received the Ph.D. degree in Microelectronics from Fudan University, Shanghai, China, in 2016. His research focuses on memory circuit design and applications, new computing paradigms and 3D Chips. He has been awarded the National Natural Science Foundation of China (NSFC) Outstanding Youth Fund and has led several major research projects, including the State Key Program of NSFC, the Strategic Priority Research Program of Chinese Academy of Sciences, and key projects at National Laboratories. Recognized for his contributions, he was selected for the CAS Youth Innovation Promotion Association and received the 2021 Huawei Olympus Pioneer Award. He has authored over 20 papers at top conferences (ISSCC, IEDM, VLSI), including 12 as first/corresponding author, and over 10 journal articles in Nature Communications, TVLSI, JSSC, and TCAS-I etc. Additionally, he holds over 20 invention patents.