Title：A Century Field Effect Transistor: Past, Trends and Challenges for the Next Decade
Location: Grand Ballroom, 4th Floor, Crowne Plaza Hotel
Speaker: Prof. Cor Claeys, Fellow IEEE/ECS, Leuven, Belgium

 

Abstract: The micro and nanoelectronics device evolution towards fully integration in our daily life has been driven by Moore’s law, requiring the use of novel materials, the development of novel processing schemes and the switch toward novel design concepts and device architectures. Semiconductors are everywhere, are essential to solve humanitarian challenges and are at the basis of innovative technologies such as AI.

A century ago, the first patent on the Field Effect Transistor was filed by Julius E. Lilienfeld. In 1960 D. Kahng and M. Atilla demonstrated for the first time the MOSFET operation, a key building bloc of the Intel 4004 microprocessor in 1971. Nowadays, device architectures such as FinFETs, TFETs, Gate-All-Around, nanowires (NWs), nanosheets (NSs), CFET and Forksheet structures for logic and analog/RF building blocks enable System-on-Chip (SoC) applications. The strong progress achieved in silicon technology and heterogenous integration of Ge and III-V technologies on a silicon platform results in the on-chip integration of building blocks with different functionality. In addition, there is a commercial breakthrough of GaN devices, although dependent on the application competing with SiC. Major trends in process integration approaches are reviewed and technological challenges of some process modules and device structures highlighted.

 

Bio: 

Prof. Cor Claeys was with imec, Leuven, Belgium from 1984 till 2016 and had various managerial positions. He also became Professor at the KU Leuven (Belgium) in 1990. His main interests are semiconductor technology, device physics, low frequency noise phenomena, radiation effects and defect engineering. He is teaching a variety of short courses in different parts of the world (Europe, China, India and Brazil).

He co-edited books on “Low Temperature Electronics” and “Germanium-Based Technologies: From Materials to Devices” and wrote monographs on “Radiation Effects in Advanced Semiconductor Materials and Devices”, “Fundamental and Technological Aspects of Extended Defects in Germanium”, “Random Telegraph Signals in Semiconductor Devices” and “Metals in Silicon- and Germanium-Based Technologies: Origin, Characterization, Control and Electrical Impact”. Two books are translated in Chinese. He (co)authored 16 book chapters, over 1200 conference presentations and more than 1400 technical papers (of which more than 430 in peer-reviewed scientific journal). He is editor/co-editor of 70 Conference Proceedings.