2021 IEEE 14th International Conference on ASIC

Oct. 26-29, 2021, Kunming, China

T-5 GaN devices and GaN-Si CMOS integration



T-5 GaN devices and GaN-Si CMOS integration

Prof. Zhihong Liu
Xidian University, China

During the last two decades, Gallium Nitride (GaN) based materials have emerged and demonstrated strong competitiveness in the fields of RF and power applications. Benefitted from the superior material properties such as wide-band gap, high critical electrical field, strong spontaneous and piezoelectric polarization, and high saturation velocity etc., GaN devices show excellent performance such as high output power density, high efficiency for RF applications and high switching frequency, low loss for power applications. This tutorial talk will start from a brief on the advances of GaN and its related III-nitride materials for electric devices, and then will give a short introduction on the general structures, operation basics, design key points and fabrication process of the GaN RF and power devices. Next the progress of the research and development of GaN devices will be overviewed. The motivation, main technical routes and current R&D status of the GaN-Si CMOS integration will also be presented. At last a summary will be given regarding the opportunities and channelings about other types of novel GaN devices.


Prof. Zhihong LIU

Zhihong Liu is now a Professor from Xidian University, China. He is also an IEEE senior member. He received his B. Sc from Nankai University, China in 2001, M. Eng form the Institute of Semiconductors, Chinese Academy of Science, China in 2004 and PhD from Nanyang Technological University, Singapore in 2011. In 2007, he joined Temasek Laboratories@Nanyang Technological University as a Research Associate. In 2011, he joined Singapore-MIT Alliance for Research and Technology (SMART) center as a PostDoc Associate, and was promoted to a Research Scientist in 2014 and a Principal Research Scientist in 2016. In 2019, He joined Xidian University as a Professor. Zhihong Liu has hold around 20 years' experience on the research and development of compound semiconductor devices, particularly GaN based RF and power devices, and also GaN-Si CMOS integration technologies. His current research is focused on the GaN and other wide-band gap semiconductor mmWave/THz devices and circuits.